Datasheet Details
| Part number | BUK436-800A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.38 KB |
| Description | N-Channel MOSFET |
| Download | BUK436-800A Download (PDF) |
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| Part number | BUK436-800A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 231.38 KB |
| Description | N-Channel MOSFET |
| Download | BUK436-800A Download (PDF) |
|
|
|
·Drain Source Voltage- : VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage Drain BUK436-800A ID Current-continuou s@ TC=25℃ BUK436-800B Ptot Total Dissipation@TC=25℃ ±30 V 4 A 3.5 125 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 45 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK436-800A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 0.25mA 800 V VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK436-800A/B.
| Part Number | Description |
|---|---|
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