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BUK444-200A Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

Overview: isc N-Channel MOSFET Transistor.

General Description

·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-200A ID Current-continuous @ TC=25℃ BUK444-200B Ptot Total Dissipation@TC=25℃ Tj Max.

Operating Junction Temperature Tstg Storage Temperature Range VALUE UNIT 200 V ±30 V 5.3 A 4.7 25 W 150 ℃ 150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 55 ℃/W BUK444-200A/B isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK444-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS;

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