Datasheet Details
| Part number | BUK444-600A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.13 KB |
| Description | N-Channel MOSFET |
| Download | BUK444-600A Download (PDF) |
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| Part number | BUK444-600A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.13 KB |
| Description | N-Channel MOSFET |
| Download | BUK444-600A Download (PDF) |
|
|
|
·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK444-600A ID Current-continuous @ TC=25℃ BUK444-600B VALUE UNIT 600 V ±30 V 1.6 A 1.5 Ptot Total Dissipation@TC=25℃ 25 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK444-600A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B.
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