Datasheet Details
| Part number | BUK445-100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.08 KB |
| Description | N-Channel MOSFET |
| Download | BUK445-100A Download (PDF) |
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| Part number | BUK445-100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 226.08 KB |
| Description | N-Channel MOSFET |
| Download | BUK445-100A Download (PDF) |
|
|
|
·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-100A ID Current-continuous @ TC=25℃ BUK445-100B VALUE UNIT 100 V ±30 V 14 A 12 Ptot Total Dissipation@TC=25℃ 30 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK445-100A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 1mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK445-100A/B.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUK445-100A | Power MOS Transistor | Philips |
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BUK445-100A | N-Channel 100V MOSFET | VBsemi |
|
BUK445-100B | Power MOS Transistor | Philips |
| Part Number | Description |
|---|---|
| BUK445-100B | N-Channel MOSFET |
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| BUK445-400B | N-Channel MOSFET |
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| BUK445-600B | N-Channel MOSFET |
| BUK444-200A | N-Channel MOSFET |
| BUK444-200B | N-Channel MOSFET |
| BUK444-600A | N-Channel MOSFET |
| BUK444-600B | N-Channel MOSFET |
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