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BUK445-400A Datasheet N-Channel MOSFET

Manufacturer: Inchange Semiconductor

General Description

·Drain Source Voltage- : VDSS=400V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage Drain BUK445-400A ID Current-continuous @ TC=25℃ BUK445-400B VALUE UNIT 400 V ±30 V 4 A 3.8 Ptot Total Dissipation@TC=25℃ 30 W Tj Max.

Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range 150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK445-400A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;

ID= 1mA 400 V VGS(th) Gate Threshold Voltage VDS=VGS;

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK445-400A/B.