Datasheet Details
| Part number | BUK454-200A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.37 KB |
| Description | N-Channel MOSFET |
| Download | BUK454-200A Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | BUK454-200A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 224.37 KB |
| Description | N-Channel MOSFET |
| Download | BUK454-200A Download (PDF) |
|
|
|
·Drain Source Voltage- : VDSS=200V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage Drain BUK454-200A ID Current-continuou s@ TC=37℃ BUK454-200B Ptot Total Dissipation@TC=25℃ ±30 V 9.2 A 8.2 90 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER 175 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W BUK454-200A/B isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor BUK454-200A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS=VGS;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUK454-200A | PowerMOS transistor | NXP |
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