Datasheet Details
| Part number | BUK555-100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.70 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 BUK555-100A Datasheet
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| Part number | BUK555-100A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 229.70 KB |
| Description | N-Channel MOSFET |
| Datasheet |
BUK555-100A Datasheet
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·Drain Source Voltage- : VDSS=100V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±15 V Drain BUK555-100A 25 ID Current-continuous A @ TC=25℃ BUK555-100B 22 Ptot Total Dissipation@TC=25℃ 125 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range 175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 60 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor INCHANGE Semiconductor BUK555-100A/B ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0;
ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS=VGS;
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK555-100A/B.
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