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BUL1102E Datasheet Preview

BUL1102E Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BUL1102E
DESCRIPTION
·High Voltage
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Four lamp electronic ballsat for : 120v mains in push-pull
configuration
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCES
Collector-Emitter Voltage VBE= 0
1100
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
100
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUL1102E Datasheet Preview

BUL1102E Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICES
Collector Cutoff Current
VCE= 1100V; VBE= 0
IEBO
Collector Cutoff Current
VCE= 12V; IB= 0
hFE-1
DC Current Gain
IC= 250mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
BUL1102E
MIN TYP. MAX UNIT
450
V
1.5
V
1.5
V
0.1 mA
1
mA
35
70
12
20
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUL1102E
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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