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BUL1203E Datasheet Preview

BUL1203E Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·High Speed Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Electronic ballasts for fluorescent lighting
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCES
Collector-Emitter Voltage VBE= 0
1200
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
100
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 /W
BUL1203E
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUL1203E Datasheet Preview

BUL1203E Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 3A; IB= 1A
ICES
Collector Cutoff Current
VCE= 1200V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 550V; IB= 0
hFE-1
DC Current Gain
IC= 1mA; VCE= 5V
hFE-2
DC Current Gain
IC= 10mA; VCE= 5V
hFE-3
DC Current Gain
IC= 0.8A; VCE= 3V
hFE-4
DC Current Gain
IC= 2A; VCE= 5V
Switching Times ;Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 2A; IB1= 0.4A; IB2= -0.8A;
tp= 30μs; VCC= 150V
BUL1203E
MIN TYP. MAX UNIT
550
V
0.5
V
0.7
V
1.5
V
1.5
V
1.5
V
0.1 mA
0.1 mA
10
10
14
32
9
28
0.5 μs
3.0 μs
0.3 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUL1203E
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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BUL1203E Datasheet PDF





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