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BUL310XI NPN Transistor

BUL310XI Description

isc Silicon NPN Power Transistor .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min. Low Collector Saturation Voltage : VCE(sat) = 0.

BUL310XI Applications

* Designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continu

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Datasheet Details

Part number
BUL310XI
Manufacturer
INCHANGE
File Size
209.18 KB
Datasheet
BUL310XI-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BUL310XI-like datasheet