900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BUL310XI Datasheet Preview

BUL310XI Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 500V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A
· High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in lighting applications and low cost
switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1000
V
VCEO Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-peak tp<5ms
10
A
IB
Base Current-Continuous
3
A
IBM
Base Current-peak tp<5ms
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
4
A
36
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5 /W
Rth j-A Thermal Resistance,Junction to Ambient 62.5 /W
BUL310XI
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUL310XI Datasheet Preview

BUL310XI Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUL310XI
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;Ib=0
500
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
0.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
0.7
V
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.1
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.0
V
VBE(sat)-2 Base-Emitter Saturation Voltage
VBE(sat)-3 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 2A; IB= 0.4A
IC= 3A; IB= 0.6A
VCE=1000V; VBE= 0
VCE=1000V; VBE= 0, TC= 125
VCE= 400V; IB= 0
1.1
V
1.2
V
0.1
0.5
mA
0.25 mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 3A; VCE= 2.5V
10
Switching Times, Inductive Load
ts
Storage Time
tf
Fall Time
IC= 2A; VCL= 250V; L= 200μH;
IB1= 0.4A; VBE(off)= -5V; RBB= 0Ω
1.9 μs
0.16 μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUL310XI
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BUL310XI Datasheet PDF





Similar Datasheet

1 BUL310XI NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy