BUL310XI - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

INCHANGE

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Datasheet Details

Part number	BUL310XI
Manufacturer	Inchange Semiconductor
File Size	209.18 KB
Description	NPN Transistor
Datasheet	BUL310XI Datasheet
Additional preview pages of the BUL310XI datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A · High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.

Published: Sep 8, 2020 |