Datasheet Details
| Part number | BUL312 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.56 KB |
| Description | NPN Transistor |
| Download | BUL312 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL312 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.56 KB |
| Description | NPN Transistor |
| Download | BUL312 Download (PDF) |
|
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1150 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 3 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 75 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.65 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W BUL312 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL312 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUL312FH | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
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BUL312FP | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST Microelectronics |
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