Datasheet Details
| Part number | BUL382D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.23 KB |
| Description | NPN Transistor |
| Download | BUL382D Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUL382D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.23 KB |
| Description | NPN Transistor |
| Download | BUL382D Download (PDF) |
|
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 8 A IB Base Current-Continuous 2 A IBM Base Current-peak tp<5ms PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 4 A 70 W 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.78 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W BUL382D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUL382D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUL382D | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | STMicroelectronics |
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BUL382 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
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