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BUL416T - NPN Transistor

Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL416T DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 800V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V(Max) @ IC= 2A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
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