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BUL6825 Datasheet Preview

BUL6825 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 0.5V(Max) @ IC= 1A
·High Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in relay drivers ,inverters ,switching regulators
and deflection circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-peak
8
A
IB
Base Current-Continuous
2
A
IBM
Base Current-peak
PC
Collector Power Dissipation
TC=25
Ti
Junction Temperature
4
A
75
W
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
BUL6825
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUL6825 Datasheet Preview

BUL6825 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUL6825
ELECTRICAL CHARACTERISTICS
TC =25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; Ib=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 2A; IB= 0.5A
VCB=700V ;IE=0
TC=100
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
VCB= 10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product IC=0.5A;VCE=5V
Switching Times, Inductive Load
td
Delay time
tr
Rise time
ts
Storage Time
tf
Fall Time
VCC= 125V;IC= 2A;IB1=IB2= 0.4A
MIN TYP. MAX UNIT
400
V
0.5
V
0.6
V
1.0
V
1.2
V
1.6
V
1.0
5.0
mA
1.0 mA
10
60
8
40
65
pF
4
MHz
0.1 μs
0.7 μs
4.0 μs
0.9 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUL6825
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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BUL6825 Datasheet PDF





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