Inchange Semiconductor BUL810
Silicon NPN Power Transistor
| Part No. | BUL810 |
|---|---|
| Datasheet | BUL810 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage Capability●High Switching Speed
APPLICATIONS
Designed for use in lighting applications and low cost swith-mode power supplies.●Electronic transformer for halogen lamps
●Electronic ballasts for fluorescent lighting
●Switch mode power supplies
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9V IC Collector Current-Continuous 15 A ICM Collector Current-peak ( tp <5 ms ) 22 A IBB Base Current-Continuous 5A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction-Case 1.0 Thermal Resistance,Junction-Ambient 30 ℃/W ℃/W isc Web