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BUP41 - Silicon NPN Power Transistor

General Description

High Collector Current-IC= 6A Low Collector Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A High Switching Speed Complement to Type BUP40 APPLICATIONS

For audio amplifier and general purpose applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP41 DESCRIPTION ·High Collector Current-IC= 6A ·Low Collector Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A ·High Switching Speed ·Complement to Type BUP40 APPLICATIONS ·For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.