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BUR50 Datasheet Preview

BUR50 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 125V(Min)
·High Current Capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low voltage ,high speed,power switching in
Inductive circuits where fall time is critical.It is particularly
suited for battery switch mode application such as
switching regulations.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
70
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
20
A
350
W
-65~200
Tstg
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.5
/W
BUR50
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUR50 Datasheet Preview

BUR50 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 35A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 70A; IB= 7A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 35A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 70A; IB=7A
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 125V;IB= 0
VCB= 200V; IE= 0
VCB= 200V; IE= 0; TC= 125
VEB= 7V; IC=0
hFE-1
DC Current Gain
IC= 5A ; VCE= 4V
hFE-2
DC Current Gain
IC= 50A ; VCE= 4V
BUR50
MIN TYP. MAX UNIT
125
V
1.0
V
1.2
V
1.8
V
2.0
V
1.0 mA
0.2
2
mA
0.2 mA
20
15
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUR50
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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