Datasheet Details
| Part number | BUT100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.16 KB |
| Description | NPN Transistor |
| Datasheet |
 BUT100 Datasheet
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| Part number | BUT100 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.16 KB |
| Description | NPN Transistor |
| Datasheet |
BUT100 Datasheet
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min.) ·Hight Current Capability ·Hight Ruggedness ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor Control ·Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 50 A ICM Collector Current-Peak Repetitive 150 A PC Collector Power Dissipation @ TC=75℃ 300 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -55~200 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor BUT100.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUT100 | HIGH POWER NPN SILICON TRANSISTOR | STMicroelectronics |
| Part Number | Description |
|---|---|
| BUT12AX | NPN Transistor |
| BUT56AF | NPN Transistor |