900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

BUT100 Datasheet Preview

BUT100 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUT100
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min.)
·Hight Current Capability
·Hight Ruggedness
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Motor Control
·Uninterruptable Power Supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
50
A
ICM
Collector Current-Peak Repetitive
150
A
PC
Collector Power Dissipation
@ TC=75
300
W
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-55~200
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BUT100 Datasheet Preview

BUT100 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) )
Collector-Emitter Saturation Voltage
IC= 50A; IB= 2.5A
IC = 50A IB = 2.5A Tj = 100
VBE(sat) Base-Emitter Saturation Voltage
IC= 50A; IB= 2.5A
IC = 50A IB = 2.5A Tj = 100
hFE
DC Current Gain
IC= 1A ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
ICEO
Collector Cut-off Current
VCE=125V; IE= 0
VCE = 125V; TC= 100
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
Pulsed: Pulse duration = 3µs, duty cycle = 2 %
BUT100
MIN TYP. MAX UNIT
125
V
200
V
7
V
0.9
1.2
V
1.4
1.4
V
50
10 μA
1
5
mA
10 μA
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUT100
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

BUT100 Datasheet PDF





Similar Datasheet

1 BUT100 HIGH POWER NPN SILICON TRANSISTOR
STMicroelectronics
2 BUT100 NPN Transistor
INCHANGE





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy