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BUT56AF Datasheet Preview

BUT56AF Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
BUT56AF
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min.)
·High Speed Switching
·High Power Dissipation
·With TO-220Fa Package
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for switching mode power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1000
V
VCEO
Collector-Emitter Voltage
450
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
10
A
IBM
Base Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
50
W
150
Tstg
Storage Temperature Range
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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BUT56AF Datasheet Preview

BUT56AF Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
BUT56AF
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
450
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4A; IB= 0.8A
VCE=1000V; VBE= 0
VCE=1000V; VBE= 0; TC=150
VEB= 6V; IC= 0
2.0
V
1
2
mA
0.1 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
45
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
4
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V, ftest= 1MHz
10
MHz
Switching Times ;Resistive Load
toff
Turn-off Time
tf
Fall Time
IC=4A ;IB1=-IB2=1.25A
tp=20μs
4
μs
1
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BUT56AF
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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