Datasheet Details
| Part number | BUV25 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.43 KB |
| Description | NPN Transistor |
| Download | BUV25 Download (PDF) |
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| Part number | BUV25 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.43 KB |
| Description | NPN Transistor |
| Download | BUV25 Download (PDF) |
|
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·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 4A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 7 V 15 A 20 A 3 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
isc Silicon NPN Power Transistor BUV25.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUV25 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUV23 | NPN Transistor |
| BUV26 | NPN Transistor |
| BUV26G | NPN Transistor |
| BUV12 | NPN Transistor |
| BUV46A | NPN Transistor |
| BUV47 | NPN Transistor |
| BUV47A | NPN Transistor |
| BUV47AFI | NPN Transistor |
| BUV47B | NPN Transistor |
| BUV48 | NPN Transistor |