Datasheet4U Logo Datasheet4U.com

BUV46A - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high voltage, fast switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUV46A HIGH VOLTAGE NPN SILICON POWER TRANSISTORS STMicroelectronics
BUV46A SILICON POWER TRANSISTOR SavantIC
BUV46AFI Silicon NPN Power Transistor Inchange Semiconductor
BUV46 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS STMicroelectronics
BUV46 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
BUV47 NPN Transistor
BUV47A NPN Transistor
BUV47AFI NPN Transistor
BUV47B NPN Transistor
BUV48 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor BUV46A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 3 A 70 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.