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BUV70 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) High Power Dissipation Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

supplies applications.

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isc Silicon NPN Power Transistor BUV70 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min) ·High Power Dissipation ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor controls, switching mode power supplies applications.