Datasheet Details
| Part number | BUW17 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.75 KB |
| Description | NPN Transistor |
| Download | BUW17 Download (PDF) |
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| Part number | BUW17 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.75 KB |
| Description | NPN Transistor |
| Download | BUW17 Download (PDF) |
|
|
|
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, fast switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PT Total Power Dissipation @ TC≤25℃ TJ Junction Temperature 3 A 100 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.4 ℃/W BUW17 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW17 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
isc Silicon NPN Power Transistor.
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| BUW11AF | NPN Transistor |
| BUW11F | NPN Transistor |
| BUW11W | NPN Transistor |
| BUW12 | NPN Transistor |
| BUW12A | NPN Transistor |
| BUW13 | NPN Transistor |
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