BUW24 Overview
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 350V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching mode power supply. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;...
