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BUX25 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desinged for use in switching and linear applications in military and industrial equipment.

Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 7 V 15 A 20 A 3 A 350 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃/W BUX25 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX25 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

Overview

isc Silicon NPN Power Transistor.