Datasheet Details
| Part number | BUX42 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.61 KB |
| Description | NPN Transistor |
| Datasheet | BUX42-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUX42 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.61 KB |
| Description | NPN Transistor |
| Datasheet | BUX42-INCHANGE.pdf |
|
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·Low Collector Saturation Voltage- : VCE(sat)= 1.2V (Max.)@IC= 4A ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching and linear applications in military and industrial equipment.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCEO VCEX VCBO Collector-Emitter Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 250 V 300 V 300 V 7 V 12 A 15 A 2.4 A 120 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.46 ℃/W BUX42 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUX42 | NPN Transistor | Motorola Inc |
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BUX42 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUX40 | NPN Transistor |
| BUX40A | NPN Transistor |
| BUX41 | NPN Transistor |
| BUX46 | NPN Transistor |
| BUX46A | NPN Transistor |
| BUX47 | NPN Transistor |
| BUX47A | NPN Transistor |
| BUX48A | NPN Transistor |
| BUX48B | NPN Transistor |
| BUX48C | NPN Transistor |