Datasheet Details
| Part number | BUX59 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet | BUX59-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUX59 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.70 KB |
| Description | NPN Transistor |
| Datasheet | BUX59-INCHANGE.pdf |
|
|
|
·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BUX59 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 8A;
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