Datasheet Details
| Part number | BUX60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.59 KB |
| Description | NPN Transistor |
| Download | BUX60 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUX60 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.59 KB |
| Description | NPN Transistor |
| Download | BUX60 Download (PDF) |
|
|
|
·Low Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high frequency and efficiency converters,switching regulators and motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A PC Collector Power Dissipation@TC=25℃ 70 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5.0 ℃/W BUX60 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 8A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUX60 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
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| BUX62 | NPN Transistor |
| BUX63 | NPN Transistor |
| BUX64 | NPN Transistor |
| BUX65 | NPN Transistor |
| BUX66 | PNP Transistor |
| BUX66A | PNP Transistor |
| BUX67 | NPN Transistor |
| BUX67A | NPN Transistor |
| BUX67B | NPN Transistor |