Datasheet Details
| Part number | BUY18S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.74 KB |
| Description | NPN Transistor |
| Datasheet | BUY18S-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor BUY18S.
| Part number | BUY18S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.74 KB |
| Description | NPN Transistor |
| Datasheet | BUY18S-INCHANGE.pdf |
|
|
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· ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(MIN) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use switching and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC＜75℃ Tj Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.08 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BUY18S | Bipolar NPN Device | Seme LAB |
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