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BUY30 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.) Excellent Safe Operating Area High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switch

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isc Silicon NPN Power Transistor BUY30 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 250V(Min.) ·Excellent Safe Operating Area ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverter.