Datasheet Details
| Part number | BUY49P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.09 KB |
| Description | NPN Transistor |
| Datasheet | BUY49P-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BUY49P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.09 KB |
| Description | NPN Transistor |
| Datasheet | BUY49P-INCHANGE.pdf |
|
|
|
·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 5.0 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.33 ℃/W BUY49P isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 20mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
Compare BUY49P distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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