Datasheet Details
| Part number | BUY72 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.81 KB |
| Description | NPN Transistor |
| Download | BUY72 Download (PDF) |
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| Part number | BUY72 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.81 KB |
| Description | NPN Transistor |
| Download | BUY72 Download (PDF) |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V@ IC= 7A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general switching applications at higher outputs.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 280 V VCES Collector-Emitter Voltage 280 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC≤75℃ Tj Junction Temperature 2 A 60 W 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.66 ℃/W BUY72 · isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUY72 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 20mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BUY72 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| BUY70A | NPN Transistor |
| BUY70B | NPN Transistor |
| BUY70C | NPN Transistor |
| BUY71 | NPN Transistor |
| BUY73 | NPN Transistor |
| BUY77 | NPN Transistor |
| BUY79 | NPN Transistor |
| BUY12 | NPN Transistor |
| BUY18S | NPN Transistor |
| BUY20 | NPN Transistor |