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isc Silicon NPN Power Transistor
BUY94
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 300V(Min) ·High Switching Speed ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
750
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5.