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C0718 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

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isc Silicon NPN Power Transistor INCHANGE Semiconductor C0718 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 250V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.