isc Thyristors
C106D
FEATURES
·Glassivated surface for reliability and uniformity
·Practical level triggering and holding characteristics
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation
Is important.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) On-state current TA=30℃
IT(RMS) RMS on-state current
ITM Surge peak on-state current
PGM Peak gate power
PG(AV) Average gate power
Tj
Operating Junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
400
400
2.55
4
20
0.5
0.1
110
-40 ~+150
3
75
UNIT
V
V
A
A
A
W
W
℃
℃
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
VTM On-state voltage
ITM= 4A
IGT
Gate-trigger current
VAK=6V; RL=100Ω
VGT Gate-trigger voltage
VAK=6V; RL=100Ω
IH
Holding current
VAA=12V; RGK=1kΩ
TYP. MAX UNIT
0.01
0.1
mA
0.01
0.1
mA
2.2 V
200 μA
0.8 V
3 mA
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