isc Thyristors
C106M
FEATURES
·Glassivated surface for reliability and uniformity
·Practical level triggering and holding characteristics
·Designed for high volume consumer applications such as
temperature, light, and speed control; process and remote
control, and warning systems where reliability of operation
Is important.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TO-126
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
Repetitive peak off-state voltage
VRRM
Repetitive peak off-state voltage
IT(AV)
Average on-state current
IT(RMS)
RMS on-state current
PGM
Peak gate power
PG(AV)
Average gate power
ITSM
Non-repetitive peak on-state current
Tj
Operating junction temperature
Tstg
Storage temperature
MIN
600
600
2.5
4
0.5
0.2
20
110
-40~+ 150
UNIT
V
V
A
A
W
W
A
℃
℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VRRM=600V
VRRM=600V, Tj= 125℃
IDRM
Repetitive peak off-state current
VDRM=600V
VDRM=600V, Tj= 125℃
IGT
Gate trigger current
VD= 6V; RL=100Ω, RGK=1KΩ
VTM On-state voltage
IT= 8A
IH
Holding current
VD=24V, RGK=1KΩ, ITM=4A
VGT Gate trigger voltage
VD= 12V; RL=100Ω, RGK=1KΩ
MIN MAX UNIT
10
200
μA
10
200
μA
10 200 μA
1.75 V
5 mA
0.8 V
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