C122B1
DESCRIPTION
- With TO-220 packaging
- High heat dissipation and durability
- Thermowatt construction for low thermal
- Glass passivated junctions and center gate fire for greater parameter uniformity and stability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(AV) Average on-state current
ITSM
Surge non-repetitive on-state current ( 1/2 cycle,sine wave;60HZ;Tc=75℃ )
PG(AV) Average gate power dissipation
Tp=8.3ms;Tc=70℃
Tj
Operating junction temperature
Tstg
Storage temperature
UNIT
-40~125 ℃
-40~150 ℃ isc website：.iscsemi. isc & iscsemi is registered trademark isc Thyristors
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak...
