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C1969 Datasheet

Manufacturer: Inchange Semiconductor
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Datasheet Details

Part number C1969
Datasheet C1969-INCHANGE.pdf
File Size 188.94 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
C1969 page 2

C1969 Overview

Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 60 25 V V V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector Cutoff Current IE= 5mA, IC= 0 VCB= 30V;.

C1969 from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Mitsubishi Electric Semiconductor Logo C1969 2SC1969 Mitsubishi Electric Semiconductor
eleflow C1969 silicon NPN epitaxial planar type transistor eleflow
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