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C1969 Datasheet Preview

C1969 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
DESCRIPTION
·High Power Gain-
: Gpe12dB,f= 27MHz, PO= 16W
·High Reliability
APPLICATIONS
·Designed for 10~14 watts output power class AB amplifiers
applications in HF band.
ABSOLUTE MAXIMUM RATINGS (Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage RBE=
25
V
VEBO Emitter-Base Voltage
5V
IC Collector Current
Collector Power Dissipation
@TC=25
PC
Collector Power Dissipation
@Ta=25
Tj Junction Temperature
Tstg Storage Temperature Range
6A
20
W
1.7
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient 73.5 /W
Thermal Resistance,Junction to Case
6.25 /W
isc websitewww.iscsemi.cn
1




INCHANGE

C1969 Datasheet Preview

C1969 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1969
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE=
60
25
V
V
V(BR)EBO Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
IE= 5mA, IC= 0
VCB= 30V; IE= 0
5V
0.1 mA
IEBO Emitter Cutoff Current
VEB= 4V; IC= 0
0.1 mA
hFE DC Current Gain
PO Output Power
ηC Collector Efficiency
IC= 10mA; VCE= 12V
10 180
16 18
VCC= 12V; Pin= 1W; f= 27MHz
60 70
W
%
hFE Classifications
XA
B
10-25 20-45 35-70
CD
55-110 90-180
isc websitewww.iscsemi.cn
2


Part Number C1969
Description Silicon NPN Power Transistor
Maker INCHANGE
PDF Download

C1969 Datasheet PDF






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