C1969 - Silicon NPN Power Transistor

Description

High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W High Reliability APPLICATIONS

applications in HF band.

INCHANGE

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Datasheet Details

Part number	C1969
Manufacturer	Inchange Semiconductor
File Size	188.94 KB
Description	Silicon NPN Power Transistor
Datasheet	C1969 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC1969 DESCRIPTION ·High Power Gain- : Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage RBE= ∞ 25 V VEBO Emitter-Base Voltage 5V IC Collector Current Collector Power Dissipation @TC=25℃ PC Collector Power Dissipation @Ta=25℃ Tj Junction Temperature Tstg Storage Temperature Range 6A 20 W 1.7 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Rth j-c Thermal Resistance,Junction to Ambient 73.5 ℃/W Thermal Resistance,Junction to Case 6.

Published: Nov 18, 2014 |