C2120 - Silicon NPN Transistor

Inchange Semiconductor

General Description

High hFE(1)=100-320 1 Watts Amplifier Applications Complement to Type 2SA950 APPLICATIONS Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector

📥 Download Datasheet

C2120 silicon npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	C2120
Manufacturer	Inchange Semiconductor
File Size	98.52 KB
Description	Silicon NPN Transistor
Datasheet	C2120 Datasheet

Full PDF Text Transcription for C2120 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for C2120. For precise diagrams, and layout, please refer to the original PDF.

INCHANGE Semiconductor isc Silicon NPN Transistor isc Product Specification 2SC2120 DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2...

View more extracted text

h hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 35 V 30 V 5V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.

📁 Similar Datasheet

Part Number	Description	Manufacturer
C2120	NPN Transistor	JIANGSU CHANGJIANG
C2120	Silicon NPN Transistor	Toshiba Semiconductor
C2120	NPN Transistor	SeCoS
C2120	NPN Transistor	Dc Components
C2120	NPN Transistor	SEMTECH

More Datasheets from Inchange Semiconductor

Part Number	Description