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C3306 - Silicon NPN Power Transistor

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

High speed

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Datasheet Details

Part number C3306
Manufacturer Inchange Semiconductor
File Size 210.29 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet C3306 Datasheet
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    isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3306 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications.
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