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INCHANGE

C4371 Datasheet Preview

C4371 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4371
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400(Min)
·Excellent Switching Times-
: tr= 1.0μs(Max), tf= 1.0μs(Max)@ IC= 4A
APPLICATIONS
·Switching regulator application
·High voltage switching application
·High Speed DC-DC converter application
·Fluorescent light ballastor application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
7A
IBB Base Current-Continuous
Collector Power Dissipation
@Ta=25
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
1A
2
W
30
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.net/




INCHANGE

C4371 Datasheet Preview

C4371 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4371
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
400
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
500
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO Collector Cutoff Current
VCB= 400V; IE= 0
1.0 V
1.5 V
100 μA
IEBO Emitter Cutoff Current
VEB= 7V; IC= 0
1 mA
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
12
hFE-2
DC Gurrent Gain
IC= 5A ; VCE= 5V
8
Switching times
tr Rise Time
tstg Storage Time
tf Fall Time
IB1= -IB2= 0.4A; VCC200V
RL= 50Ω;PW=20μs Duty1%
1.0 μs
2.5 μs
1.0 μs
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet4u.net/


Part Number C4371
Description Silicon NPN Power Transistor
Maker INCHANGE
PDF Download

C4371 Datasheet PDF






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