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CD551B Datasheet Preview

CD551B Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO
Collector-Emitter Voltage
-35
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-3
A
1.8
W
125
Tstg
Storage Temperature Range
-55~125
CD551B
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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CD551B Datasheet Preview

CD551B Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A
VBE(sat)
Base-Emitter On Voltage
IC= -0.5A; VCE= -0.05V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0
ICEO
Emitter Cutoff Current
VCE= -30V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -2V
CD551B
MIN TYP. MAX UNIT
-35
V
-35
V
-5
V
-1.0
V
-1.5
V
-20 μA
-100 μA
55
270
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number CD551B
Description Silicon PNP Power Transistor
Maker INCHANGE
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