Datasheet Details
| Part number | CD551B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.72 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | CD551B-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | CD551B |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 220.72 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | CD551B-INCHANGE.pdf |
|
|
|
·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.8 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ CD551B isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA;
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