Download CLA30MT1200NPZ Datasheet PDF
Inchange Semiconductor
CLA30MT1200NPZ
DESCRIPTION - With TO-263( D2PAK ) packaging - Operating in 3 quadrants - High mutation capability - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Switching applications - Phase control - Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RSM) ITSM PG(AV) Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature UNIT 170 185 -40~125 ℃ -40~125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃ VTM On-state voltage IT=15A Ⅰ Gate-trigger current VD...