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CLA50E1200HB - Thyristors

Description

With TO-247 packaging Long-term stability Thyristor for line frequency Planar passivated chip Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(

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isc Thyristors INCHANGE Semiconductor CLA50E1200HB DESCRIPTION ·With TO-247 packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Line rectifying 50/60 Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current IT(RMS) ITSM PG(AV) RMS on-state current Surge non-repetitive on-state current ( 1/2 cycle,sine wave ) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature @Tc=150℃ 50HZ 60HZ MIN 1200 1200 50 79 550 595 0.
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