Datasheet Details
| Part number | CS22-12IO1M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 152.27 KB |
| Description | Thyristors |
| Download | CS22-12IO1M Download (PDF) |
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| Part number | CS22-12IO1M |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 152.27 KB |
| Description | Thyristors |
| Download | CS22-12IO1M Download (PDF) |
|
|
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·With TO-220F packaging ·Long-term stability ·Thyristor for line frequency ·Planar passivated chip ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·AC power controller ·Motor control ·Power converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(AV) Average forward current ITSM Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tc=45℃ ) PG(AV) Average gate power dissipation Tj Operating junction temperature Tstg Storage temperature MIN UNIT 1200 V 1200 V Tc=85℃ 16 A 50HZ 60HZ 300 340 A 0.5 W -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor CS22-12IO1M ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ VTM On-state voltage ITM= 30A IGT Gate-trigger current VD = 6V VGT Gate-trigger voltage VD = 6V Rth(j-c) Thermal resistance Junction to case MIN MAX UNIT 5 mA 1.5 V 30 mA 1.5 V 2.5 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
isc Thyristors INCHANGE Semiconductor CS22-12IO1M.
| Brand Logo | Part Number | Description | Manufacturer |
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CS22-12io1M | High Efficiency Thyristor | IXYS |
| Part Number | Description |
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