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D1069 - Silicon NPN Power Transistor

Description

High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode APPLICATIONS

TV horizontal deflection output applications.

High voltage switching applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 7A ICM Collector Current-Peak 15 A IBB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 2A 1.75 W 40 150 ℃ -55~150 ℃ isc Website：www.iscsemi.
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