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D357 page 2
Page 2

D357 Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.