D357 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.
D357 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·plement to Type 2SB527 APPLICATIONS ·Designed for AF high power dirver applications. RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;.