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INCHANGE

D44H11 Datasheet Preview

D44H11 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
D44H11
DESCRIPTION
·Low Collector-Emitter Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC = 8A
·Fast Switching Speeds
·Complement to Type D45H11
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
80
V
5
V
10
A
20
A
50
W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.5 /W
Rth j-a Thermal Resistance,Junction to Ambient 75 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

D44H11 Datasheet Preview

D44H11 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
D44H11
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-EmitterSaturation Voltage IC= 8A ;IB= 0.4 A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 0.8 A
1.5
V
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 2A ; VCE= 1V
60
hFE-2
DC Current Gain
IC= 4A ; VCE= 1V
40
COB
Output Capacitance
VCB= 10V,f= 1.0MHz
130
pF
fT
Current-Gain—Bandwidth Product IC=0.5A;VCE= 10V;ftest=20MHz
50
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number D44H11
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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D44H11 Datasheet PDF





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