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D44Q1 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for linear and swit

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min)- D44Q1 = 175V(Min)- D44Q3 = 225V(Min)- D44Q5 ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D44Q1 200 VCBO Collector-Base Voltage D44Q3 250 V D44Q5 300 D44Q1 125 VCEO Collector-Emitter Voltage D44Q3 175 V D44Q5 225 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 31.25 W 1.
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