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D44T2 - NPN Transistor

Download the D44T2 datasheet PDF. This datasheet also covers the D44T1 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (D44T1-INCHANGE.pdf) that lists specifications for multiple related part numbers.

General Description

·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCES Collector-Emitter Voltage VBE=0 300 VCEO Collector-Emitter Voltage 250 UNIT V V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 31.2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4 ℃/W D44T1/2 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44T1/2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A;

IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A;

Overview

isc Silicon NPN Power Transistors.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Mospec Semiconductor Logo D44T2 Power Transistors Mospec Semiconductor
GE Logo D44T2 NPN POWER TRANSISTORS GE

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